歡迎至力旺招募官網註冊，直接投遞履歷：https://recruit.ememory.com.tw/

1. 類比電路開發設計與佈局優化(Bandgap, LDO, Charge Pump等類比電路)
2. 非揮發性記憶體電路開發設計(Array, Decoding, Sense Amplifier等電路)
3. 消費性、物聯網與車用電子之非揮發性記憶體電路整合開發設計
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Our Design Team is responsible for NVM (Non-Volatile Memory) IC circuit design. As an Analog Circuit Design Engineer, your responsibilities include:

1. Design, verify and debug analog circuits ( Bandgap, LDO, Charge Pump… )
2. Memory peripheral circuits t for NVM IP & test chip ( Array, Decoding, Sense Amplifier,…)
3. Work on IP specification, IP/test chip design, layout optimization and corner simulation of NVM IP

1. 電子電機工程相關科系，碩士以上學歷
2. 具bandgap, regulator, SA 等analog circuits design, charge pump design及 memory design 經驗者為佳
3. 熟悉Hspice, HSIM, AFS, XA Virtuoso, Composer及 Layout工具為佳
4. 具良好溝通協調技巧，團隊精神及創新思維
5. 對於非揮發性記憶體領域元件特性，製程或測試相關知識熟稔，有意換跑道者，對電路設計工作抱持熱忱的你，也是我們尋覓的對象
6. 與多家國際知名大廠協同開發最先進的IC產品，可以瞭解產業最新的技術脈動，歡迎喜愛接受挑戰的你，一起來開創未來

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Education, Experience & Qualifications:

1. Master degree or above in Electrical Engineering or related majors
2. Familiar with memory test chip/IP/product level design
3. Track-record of successful circuit design in bandgap, regulator, SA or charge pump areas
4. Good at CAD TOOLs like Hspice, AFS, XA, Virtuoso, Composer and Layout tools
5. In-depth knowledge of full-custom NVM IP design, embedded NVM technology criteria and limit is preferred
6. Good communication skills, team work and innovative mindset