美國紐約州1399 Route 52, Suite 101 Fishk, NY 12524, USA
HFC is focused on the development of novel magnetoresistive random access memory (MRAM) technologies and devices in collaboration with IBM. Our goal is to provide embedded MRAM solution for 55nm and below processes. In two years, we will co-work with world well known institute to develop 55nm standard Memory and use it as vehicle for developing embedded memory technology. In the next five years, we will develop 2xnm to implement our main products.