Dedicate to innovative knowledge and technique for MEMS sensor/actuator/microstructure, and develop new NPI products from customer's prototype to high-volume manufacturing.
cell phone: +886912-672891(night & weekend), mail: gfreeman1028@gamil.com
Principal Engineer, MEMS R&D dept. TSMC, from Mar./16’ to now
Description: Project management, including MEMS fabrication development, device characterization, yield improvement, risk assessment, and failure analysis. Cooperate with customers and different departments to complete NPI project.
Mar 2016 - now
- Develop optical microstructure fabrication platform
- Develop unique wafer-level bonding process (Fusion, Polymer) and complete reliability verification
- Characterize device through lithography and etching technique
Oct 2018 - Jun 2020
- Improve device performance through MEMS fabrication process
- Solving reliability issue by failure analysis techniques
- Design CMOS/ MEMS layout rules to solve and prevent device reliability issues
Jul 2010 - Dec. 2016
CMOS-MEMS Resonant Gate Field Effect Transistor (RGFET, capacitive-type MEMS resonator)
- The first CMOS-MEMS RGFET design; the work have been published in Transducers’13 and Journal of Micromechanics and Microengineering (JMM, annual highlight paper 2015 & 2016)
- CMOS-MES RGFET oscillator system design; the work has been published in IFCS’14
International researcher at Tokyo University (UTokyo), NSC joint project
- CMOS-Bio-MEMS ISFET sensors with readout circuit design
- CMOS-MEMS micro-fluidic frequency type sensors design
Sep 2008 - Jun 2010
Specification on semiconductor fabrication, ion selective sensor and measurement systems
Sep 2004 - Jun 2008
Language — Mandarin (Native) Language — English (TOEIC : Reading and Listening score :830)