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职场能力评价定义
Kuo-Lun Tai (Gordon)
Email : [email protected] - Phone:+886(0)921859681
Current Location: Hsinchu, Taiwan
3 years of work experience at TSMC, PhD in material science
- 2 years of experience in N3 FinFET source drain epitaxy process development
- 1.3 years of experience in material selection for next-generation EUV mask
- Ph.D major in 2D material synthesis and characterization
- Proficient in English (IELS 7.5)
- Open to relocation
Work Experience
Section Manager • TSMC
Mar. 2024 - present
Led a 3-member team to develop next-generation EUV mask and pellicle materials.
RD mask engineer • TSMC
Nov. 2022 - Mar. 2024
EUV mask material development
1) Selected materials via optimizing optical properties and evaluating mask process feasibility for next-generation EUV (extreme ultraviolet lithography) mask. Published research result in 2023 SPIE with best paper award and filed related patent in USPTO.
2) Led and coordinated universities (NYCU/NTHU), research institutions (ITRI/NSRRC), and suppliers to fabricate EUV mask blank.
3) Collaborated cross-departmentally to develop mask etch and repair process for in-house wafer exposure verification.
Front-end RD process engineer • TSMC
Nov. 2020 - Nov. 2022
CVD Epitaxy process development
1) Boosted wafer yield and device performance by 1.5% by CVD process paramter optimization for the N3/N3E FinFET source/drain.
2) Collaborated cross-functionally and developed a machine-learning-based methodology for CVD Epitaxy process control.
1
Education
National Chiao Tung University (NYCU)
Department of Materials Science and Engineering
2011.09 - 2015.06 Bachelor's
2015.09 - 2020.09
Ph.D.
University of Oxford
Department of Materials
2019.07 - 2020.08
Recognised Student
Skills
2D materials (Academic/PhD major)
1) Chemical vapor deposition (CVD) synthesis and transfer for 2D transition metal dichalcogenides
2) Nanoscale characterization methodology : STEM/TEM, SEM, AFM, Raman, and PL
P-type Source Drain Epitaxy for FinFET
1) Wafer-scale CVD process to boost device performance and yield for TSMC N3/N3E FinFET
2) Machine-learning-based methodology to achieve auto process control
3) Optimization of process control via SPC charts, basic JMP statistic and DoEs (Design of Experiments)
Next generation EUV mask material
1) Physical vapor deposition (PVD) of alloy material
2) Material Characterization methodology : TEM, AFM, XRR, XPS, XRD
3) RIE and E-beam repair process development for mask patterning
Awards
1) 25th Lam Research Taiwan thesis Award : Honorable mention, Atomic-Scale Characterization of Heterophases and Defects in 2D Van Der Waals Transition Metal Dichalcogenides
2) 2023 SPIE Photomask Technology BACUS Prize 2nd place, EUV APSM mask prospects and challenges
3) 2023 TSMC EBO Best Engineer Award
2
Selected Publications
1) Shy-Jay Lin, Chien-Min Lee, Yen-Liang Chen, Lee-Feng Chen, Kuo-Lun Tai, Chien-Chao Huang, Frankie F. G. Tsai, “EUV APSM mask prospects and challenges,” SPIE Photomask Technology 2023.
2) Kuo-Lun Tai, Jun Chen, Yi Wen, Hyoju Park, Qianyang Zhang, Yang Lu, Ren-Jie Chang, Peng Tang, Christopher S. Allen, Wen-Wei Wu*, and Jamie H. Warner.* “Phase Variations and Layer Epitaxy of 2D PdSe2 Grown on 2D Monolayers by Direct Selenization of Molecular Pd Precursors,” ACS Nano 2020.
3) Kuo-Lun Tai, Chun-Wei Huang, Ren-Fong Cai, Guan-Min Huang, Yi-Tang Tseng, Jun Chen and Wen-Wei Wu.“Atomic-Scale Fabrication of In-Plane Heterojunctions of Few-Layer MoS2 via In Situ Scanning Transmission Electron Microscopy,” Small, 2020.
3
Kuo-Lun Tai (Gordon)
Email : [email protected] - Phone:+886(0)921859681
Current Location: Hsinchu, Taiwan
3 years of work experience at TSMC, PhD in material science
- 2 years of experience in N3 FinFET source drain epitaxy process development
- 1.3 years of experience in material selection for next-generation EUV mask
- Ph.D major in 2D material synthesis and characterization
- Proficient in English (IELS 7.5)
- Open to relocation
Work Experience
Section Manager • TSMC
Mar. 2024 - present
Led a 3-member team to develop next-generation EUV mask and pellicle materials.
RD mask engineer • TSMC
Nov. 2022 - Mar. 2024
EUV mask material development
1) Selected materials via optimizing optical properties and evaluating mask process feasibility for next-generation EUV (extreme ultraviolet lithography) mask. Published research result in 2023 SPIE with best paper award and filed related patent in USPTO.
2) Led and coordinated universities (NYCU/NTHU), research institutions (ITRI/NSRRC), and suppliers to fabricate EUV mask blank.
3) Collaborated cross-departmentally to develop mask etch and repair process for in-house wafer exposure verification.
Front-end RD process engineer • TSMC
Nov. 2020 - Nov. 2022
CVD Epitaxy process development
1) Boosted wafer yield and device performance by 1.5% by CVD process paramter optimization for the N3/N3E FinFET source/drain.
2) Collaborated cross-functionally and developed a machine-learning-based methodology for CVD Epitaxy process control.
1
Education
National Chiao Tung University (NYCU)
Department of Materials Science and Engineering
2011.09 - 2015.06 Bachelor's
2015.09 - 2020.09
Ph.D.
University of Oxford
Department of Materials
2019.07 - 2020.08
Recognised Student
Skills
2D materials (Academic/PhD major)
1) Chemical vapor deposition (CVD) synthesis and transfer for 2D transition metal dichalcogenides
2) Nanoscale characterization methodology : STEM/TEM, SEM, AFM, Raman, and PL
P-type Source Drain Epitaxy for FinFET
1) Wafer-scale CVD process to boost device performance and yield for TSMC N3/N3E FinFET
2) Machine-learning-based methodology to achieve auto process control
3) Optimization of process control via SPC charts, basic JMP statistic and DoEs (Design of Experiments)
Next generation EUV mask material
1) Physical vapor deposition (PVD) of alloy material
2) Material Characterization methodology : TEM, AFM, XRR, XPS, XRD
3) RIE and E-beam repair process development for mask patterning
Awards
1) 25th Lam Research Taiwan thesis Award : Honorable mention, Atomic-Scale Characterization of Heterophases and Defects in 2D Van Der Waals Transition Metal Dichalcogenides
2) 2023 SPIE Photomask Technology BACUS Prize 2nd place, EUV APSM mask prospects and challenges
3) 2023 TSMC EBO Best Engineer Award
2
Selected Publications
1) Shy-Jay Lin, Chien-Min Lee, Yen-Liang Chen, Lee-Feng Chen, Kuo-Lun Tai, Chien-Chao Huang, Frankie F. G. Tsai, “EUV APSM mask prospects and challenges,” SPIE Photomask Technology 2023.
2) Kuo-Lun Tai, Jun Chen, Yi Wen, Hyoju Park, Qianyang Zhang, Yang Lu, Ren-Jie Chang, Peng Tang, Christopher S. Allen, Wen-Wei Wu*, and Jamie H. Warner.* “Phase Variations and Layer Epitaxy of 2D PdSe2 Grown on 2D Monolayers by Direct Selenization of Molecular Pd Precursors,” ACS Nano 2020.
3) Kuo-Lun Tai, Chun-Wei Huang, Ren-Fong Cai, Guan-Min Huang, Yi-Tang Tseng, Jun Chen and Wen-Wei Wu.“Atomic-Scale Fabrication of In-Plane Heterojunctions of Few-Layer MoS2 via In Situ Scanning Transmission Electron Microscopy,” Small, 2020.
3