I am a semiconductor engineer with 11 Years experiment in process handle, new product try run to mass product, TCAD simulation, WAT/CP Yield, Assembly.
New Taipei City, Taiwan Mail: 6[email protected]om.tw
1.June 2018 - Dec. 2020
I join TMBS Schottky Diode team in Vishay Corp. It is 6 inch wafer foundry house and has assembly line. I implement process improvement and new product develop within difference package type.
Accomplishment
2. Aug. 2008 - June 2018
I join in World Vanguard International Semiconductor Corp. It is 8 inch wafer foundry house and I handle BCD is 40um process within 40V LDMOS & 5/3.3V NMOS & PMOS ,BJT,and 5V ,12V Zener Diode Device for tape out products.Trench MOSFET customer are the face in process and tuning production procedure to meet customer threshold voltage and leakage requirement.
Accomplishment
Power IC Accomplishments:
Electrical Engineering • 2005 - 2007
I major in electronic material application in the semiconductor application. Master’s thesis used BaxSr1-xTiO3 within doping Mn element and then it was sputtered for MIS isolation layer by RF sputtering machine. discuss and manufacture by sputter within simple mask.
I am a semiconductor engineer with 11 Years experiment in process handle, new product try run to mass product, TCAD simulation, WAT/CP Yield, Assembly.
New Taipei City, Taiwan Mail: 6[email protected]om.tw
1.June 2018 - Dec. 2020
I join TMBS Schottky Diode team in Vishay Corp. It is 6 inch wafer foundry house and has assembly line. I implement process improvement and new product develop within difference package type.
Accomplishment
2. Aug. 2008 - June 2018
I join in World Vanguard International Semiconductor Corp. It is 8 inch wafer foundry house and I handle BCD is 40um process within 40V LDMOS & 5/3.3V NMOS & PMOS ,BJT,and 5V ,12V Zener Diode Device for tape out products.Trench MOSFET customer are the face in process and tuning production procedure to meet customer threshold voltage and leakage requirement.
Accomplishment
Power IC Accomplishments:
Electrical Engineering • 2005 - 2007
I major in electronic material application in the semiconductor application. Master’s thesis used BaxSr1-xTiO3 within doping Mn element and then it was sputtered for MIS isolation layer by RF sputtering machine. discuss and manufacture by sputter within simple mask.