14nm FiNFET BEoL process development, product yield improvement and device reliability improvement
1. BEoL interconnect (pitch 64nm, 2P2E-DUV) process develop, yield ramp up and reliability improve. EM life time reach 10,000 years in 1000ppm for specify customer requested
2. BEoL interconnect (pitch 52nm, SADP-DUV) process develop, include rule and test key design
3. 22nm eHV (device operate in 8V-27V) interconnect process develop