-16 nm FinFET platform circuit layout and process flow design -UMC's first 16 nm product ASIC speed & power control by proposing process packages -SPC of 16 nm FinFET production and problem solver -Charge mobility and silicon channel strain boost 5+% by dual epitaxial process -HK metal gate formation and dimensions design for device power control -Metal zero interconnect process robustness improvement, circuit open ratio decreased to < 1%